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Abstract AP-1 and AP-2 adaptor protein complexes mediate clathrin-dependent trafficking at the trans-Golgi network (TGN) and the plasma membrane, respectively. Whereas AP-1 is required for trafficking to plasma membrane and vacuoles, AP-2 mediates endocytosis. These AP complexes consist of four subunits (adaptins): two large subunits (β1 and γ for AP-1 and β2 and α for AP-2), a medium subunit μ, and a small subunit σ. In general, adaptins are unique to each AP complex, with the exception of β subunits that are shared by AP-1 and AP-2 in some invertebrates. Here, we show that the two putative Arabidopsis thaliana AP1/2β adaptins co-assemble with both AP-1 and AP-2 subunits and regulate exocytosis and endocytosis in root cells, consistent with their dual localization at the TGN and plasma membrane. Deletion of both β adaptins is lethal in plants. We identified a critical role of β adaptins in pollen wall formation and reproduction, involving the regulation of membrane trafficking in the tapetum and pollen germination. In tapetal cells, β adaptins localize almost exclusively to the TGN and mediate exocytosis of the plasma membrane transporters such as ABCG9 and ABCG16. This study highlights the essential role of AP1/2β adaptins in plants and their specialized roles in specific cell types. 

High-performance piezoelectric materials are critical components for electromechanical sensors and actuators. For more than 60 years, the main strategy for obtaining large piezoelectric response has been to construct multiphase boundaries, where nanoscale domains with local structural and polar heterogeneity are formed, by tuning complex chemical compositions. We used a different strategy to emulate such local heterogeneity by forming nanopillar regions in perovskite oxide thin films. We obtained a giant effective piezoelectric coefficient d 33 , f * of ~1098 picometers per volt with a high Curie temperature of ~450°C. Our lead-free composition of sodium-deficient sodium niobate contains only three elements (Na, Nb, and O). The formation of local heterogeneity with nanopillars in the perovskite structure could be the basis for a general approach to designing and optimizing various functional materials. 

The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here, we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin–charge conversion can give rise to a different type of spin current-related spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistance, which has the same angular dependence as the recently discovered spin Hall magnetoresistance. The anomalous Hall magnetoresistance is observed in four types of samples: co-sputtered (Fe_1−xMn_x)_0.6Pt_0.4, Fe_1−xMn_x/Pt multilayer, Fe_1−xMn_xwithx = 0.17–0.65 and Fe, and analyzed using the drift-diffusion model. Our results provide an alternative route to study charge–spin conversion in ferromagnets and to exploit it for potential spintronic applications.

 

The Ag and In co‐doped PbTe, Ag_nPb₁₀₀In_nTe_100+2n(LIST), exhibitsn‐type behavior and features unique inherent electronic levels that induce self‐tuning carrier density. Results show that In is amphoteric in the LIST, forming both In³⁺and In¹⁺centers. Through unique interplay of valence fluctuations in the In centers and conduction band filling, the electron carrier density can be increased from ≈3.1 × 10¹⁸cm⁻³at 323 K to ≈2.4 × 10¹⁹cm⁻³at 820 K, leading to large power factors peaking at ≈16.0 µWcm⁻¹K⁻²at 873 K. The lone pair of electrons from In⁺can be thermally continuously promoted into the conduction band forming In³⁺, consistent with the amphoteric character of In. Moreover, with rising temperature, the Fermi level shifts into the conduction band, which enlarges the optical band gap based on the Moss–Burstein effect, and reduces bipolar diffusion and thermal conductivity. Adding extra Ag in LIST improves the electrical transport properties and meanwhile lowers the lattice thermal conductivity to ≈0.40 Wm⁻¹K⁻¹. The addition of Ag creates spindle‐shaped Ag₂Te nanoprecipitates and atomic‐scale interstitials that scatter a broader set of phonons. As a result, a maximumZTvalue ≈1.5 at 873 K is achieved in Ag₆Pb₁₀₀InTe₁₀₂(LIST).